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Other articles related with "trap generation model"：
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87306 |
Hao Xu(徐昊), Hong Yang(杨红), Yan-Rong Wang(王艳蓉), Wen-Wu Wang(王文武), Wei-Chun Luo(罗维春), Lu-Wei Qi(祁路伟), Jun-Feng Li(李俊峰), Chao Zhao(赵超), Da-Peng Chen(陈大鹏), Tian-Chun Ye(叶甜春) |
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Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation |
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Chin. Phys. B
2016 Vol.25 (8): 87306-087306
[Abstract]
(720)
[HTML 1 KB]
[PDF 349 KB]
(523)
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